ZXSC440X8TA, ZXSDS2M832TA, ZXT1053AK Selling Leads, Datasheet
MFG:ZETEX Package Cooled:MSOP-8 D/C:04+

ZXSC440X8TA, ZXSDS2M832TA, ZXT1053AK Datasheet download
Part Number: ZXSC440X8TA
MFG: ZETEX
Package Cooled: MSOP-8
D/C: 04+
MFG:ZETEX Package Cooled:MSOP-8 D/C:04+
ZXSC440X8TA, ZXSDS2M832TA, ZXT1053AK Datasheet download
MFG: ZETEX
Package Cooled: MSOP-8
D/C: 04+
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Datasheet: ZXSC440X8TA
File Size: 169513 KB
Manufacturer: ZETEX [Zetex Semiconductors]
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Datasheet: ZXSC100
File Size: 424539 KB
Manufacturer: ZETEX [Zetex Semiconductors]
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Datasheet: ZXT1053AK
File Size: 139762 KB
Manufacturer: ZETEX [Zetex Semiconductors]
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Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent combination provides users with highly efficient performance in applications including DC-DC converters and charging circuits.
Parameter | Symbol |
Rating |
Unit |
Reverse Voltage | VR |
60 |
V |
Forward Voltage @ IF = 1000mA | VF |
600 |
mV |
Forward Current | IF |
1.65 |
A |
Average Forward Current D=50%, t<=300us |
IFAV |
1.24 |
A |
Non Repetitive Forward Current t<=100us Non Repetitive Forward Current t<=10ms |
IFSM |
16.8 |
A |
Power Dissipation at TA=25 (a)(f) Linear Derating Factor |
PD |
1.2 |
W |
Power Dissipation at TA=25 (b)(f) Linear Derating Factor |
PD |
2 |
W |
Power Dissipation at TA=25 (c)(f) Linear Derating Factor |
PD |
0.8 |
W |
Power Dissipation at TA=25 (d)(f) Linear Derating Factor |
PD |
0.9 |
W |
Power Dissipation at TA=25 (d)(g) Linear Derating Factor |
PD |
1.36 |
W |
Power Dissipation at TA=25 (e)(g) Linear Derating Factor |
PD |
2.4 |
W |
Storage Temp, Range | Tstg |
-55 to+150 |
|
Operating & Storage Temp, Range | Tj |
-55 to+150 |
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250/W giving a power rating of Ptot=400mW.
Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers lowon state lossesmaking it ideal for use in DC-DC circuits and various driving and power management functions.
Part Number | ZXT1053AK |
Product Type | NPN |
VCEO (V) | 75 |
IC (A) | 5 |
ICM (A) | 10 |
PD (W) | 3.4 |
hFE Min | 300 50 |
hFE Max | 1200 |
@ IC (A) | 1 5 |
VCE (SAT) Max (mV) | 160 460 |
@ IC (A) | 1 5 |
@ IB (mA) | 10 200 |
fT Min (MHz) | 140 |
RCE (SAT) (mΩ) | 70 |
Response in 12 hours
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