ZXT10N20DE6 Selling Leads, Price trend, ZXT10N20DE6 DataSheet download, circuit diagram from SeekIC.com

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 12A• IC=3.5A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Motor con...

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SeekIC No. : 004552583 Detail

ZXT10N20DE6: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 12A• IC=3.5A Continuous Collector Current• SOT23-6 packageApplicatio...

ZXT10N20DE6 Data Sheet

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Part Number:: ZXT10N20DE6
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Description

Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h_FE characterised up to 12A
• I_C=3.5A Continuous Collector Current
• SOT23-6 package

Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Pinout

Connection Diagram

Specifications

Part Number	ZXT10N20DE6
Product Type	NPN
V_CEO(V)	20
I_C (A)	3.5
I_CM (A)	19
P_D (W)	1.1
h_FE Min	300 200
h_FE Max	-
@ I_C (A)	0.2 2
V_{CE (SAT)} Max (mV)	15 250
@ I_C (A)	0.1 3.5
@ I_B (mA)	10 100
f_T Min (MHz)	100
R_{CE (SAT)} (m)	55

PARAMETER	SYMBOL	LIMIT	UNIT
Collector-base voltage	V_CBO	20	V
Collector-emitter voltage	V_CEO	20	V
Emitter-base voltage	V_EBO	5	V
Peak Pulse Current	I_CM	19	A
Continuous Collector Current	I_C	3.5	A
Base Current	I_B	500	mA
Power Dissipation at TA=25°C(a) Linear Derating Factor	P_D	1.1 8.8	W mW/
Power Dissipation at TA=25°C(b) Linear Derating Factor	P_D	1.7 13.6	W mW/
Operating and Storage Temperature Range	T_j:T_stg	-55 to +150

Description

This ZXT10N20DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

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