Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 12A• IC=4A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Motor contr...
ZXT10N15DE6: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 12A• IC=4A Continuous Collector Current• SOT23-6 packageApplication&...
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PARAMETER | SYMBOL |
LIMIT |
UNIT |
Collector-base voltage | VCBO |
15 |
V |
Collector-emitter voltage | VCEO |
15 |
V |
Emitter-base voltage | VEBO |
5 |
V |
Peak Pulse Current | ICM |
13 |
A |
Continuous Collector Current | IC |
4 |
A |
Base Current | IB |
500 |
mA |
Power Dissipation at TA=25°C(a) Linear Derating Factor |
PD |
1.1 8.8 |
W mW/ |
Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD |
1.7 13.6 |
W mW/ |
Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
Part Number | ZXT10N15DE6 |
Product Type | NPN |
VCEO(V) | 15 |
IC (A) | 4 |
ICM (A) | 13 |
PD (W) | 1.1 |
hFE Min | 300 200 |
hFE Max | - |
@ IC (A) | 0.2 3 |
VCE (SAT) Max (mV) | 14 260 |
@ IC (A) | 0.1 4 |
@ IB (mA) | 10 50 |
fT Min (MHz) | 80 |
RCE (SAT) (m) | 50 |
This ZXT10N15DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.