ZXT10P12DE6 Selling Leads, Price trend, ZXT10P12DE6 DataSheet download, circuit diagram from SeekIC.com

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Motor contr...

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SeekIC No. : 004552585 Detail

ZXT10P12DE6: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3A Continuous Collector Current• SOT23-6 packageApplication&...

ZXT10P12DE6 Data Sheet

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Part Number:: ZXT10P12DE6
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Description

Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h_FE characterised up to 10A
• I_C=3A Continuous Collector Current
• SOT23-6 package

Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Pinout

Connection Diagram

Specifications

Part Number	ZXT10P12DE6
Product Type	PNP
V_CEO(V)	-12
I_C (A)	-3
I_CM (A)	-10
P_D (W)	1.1
h_FE Min	300 180
h_FE Max	-
@ I_C (A)	-0.1 -2.5
V_{CE (SAT)} Max (mV)	-17 -300
@ I_C (A)	-0.1 -3
@ I_B (mA)	-10 -50
f_T Min (MHz)	80
R_{CE (SAT)} (m)	65

PARAMETER	SYMBOL	LIMIT	UNIT
Collector-base voltage	V_CBO	-12	V
Collector-emitter voltage	V_CEO	-12	V
Emitter-base voltage	V_EBO	-5	V
Peak Pulse Current	I_CM	-10	A
Continuous Collector Current	I_C	-3	A
Base Current	I_B	-500	mA
Power Dissipation at TA=25°C(a) Linear Derating Factor	P_D	1.1 8.8	W mW/
Power Dissipation at TA=25°C(b) Linear Derating Factor	P_D	1.7 13.6	W mW/
Operating and Storage Temperature Range	T_j:T_stg	-55 to +150

Description

This ZXT10P12DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

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