ZXT13N20DE6, ZXT13N20DE6TA, ZXT13N50DE6 Selling Leads, Datasheet
MFG:ZETEX Package Cooled:SOT23-6 D/C:06+
ZXT13N20DE6, ZXT13N20DE6TA, ZXT13N50DE6 Datasheet download
Part Number: ZXT13N20DE6
MFG: ZETEX
Package Cooled: SOT23-6
D/C: 06+
MFG:ZETEX Package Cooled:SOT23-6 D/C:06+
ZXT13N20DE6, ZXT13N20DE6TA, ZXT13N50DE6 Datasheet download
MFG: ZETEX
Package Cooled: SOT23-6
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: ZXT13N20DE6
File Size: 443007 KB
Manufacturer: ZETEX [Zetex Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ZXT13N20DE6TA
File Size: 443007 KB
Manufacturer: ZETEX [Zetex Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ZXT13N50DE6
File Size: 429241 KB
Manufacturer: ZETEX [Zetex Semiconductors]
Download : Click here to Download
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
Part Number | ZXT13N20DE6 |
Product Type | NPN |
VCEO(V) | 20 |
IC (A) | 4.5 |
ICM (A) | 15 |
PD (W) | 1.1 |
hFE Min | 300 200 |
hFE Max | 900 |
@ IC (A) | 1 5 |
VCE (SAT) Max (mV) | 75 230 |
@ IC (A) | 1 4.5 |
@ IB (mA) | 10 45 |
fT Min (MHz) | 90 |
RCE (SAT) (mΩ) | 38 |
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
Part Number | ZXT13N50DE6 |
Product Type | NPN |
VCEO (V) | 50 |
IC(A) | 4 |
ICM (A) | 10 |
PD (W) | 1.1 |
hFE Min | 300 100 |
hFE Max | 900 |
@I C (A) | 1 4 |
VCE(SAT) Max (mV) | 100 230 |
@ IC (A) | 1 4 |
@ IB (mA) | 10 100 |
fT Min (MHz) | 115 |
RCE (SAT) (mΩ) | 36 |