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ZXT10P20DE6

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 6A• IC=2.5A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Motor cont...

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ZXT10P20DE6: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 6A• IC=2.5A Continuous Collector Current• SOT23-6 packageApplication...

ZXT10P20DE6 Data Sheet

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Part Number:
ZXT10P20DE6
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 6A
• IC=2.5A Continuous Collector Current
• SOT23-6 package




Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

</tr
PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
-20
V
Collector-emitter voltage VCEO
-20
V
Emitter-base voltage VEBO
-5
V
Peak Pulse Current ICM
-6
A
Continuous Collector Current IC
-2.5
A
Base Current IB
-500
mA
Power Dissipation at TA=25°C(a)
Linear Derating Factor
 PD
1.1
8.8
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
 PD
1.7
13.6
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150


Part Number ZXT10P20DE6
Product Type PNP
VCEO(V) -20
IC (A) -2.5
ICM (A) -6
PD (W) 1.1
hFE Min 300
150
hFE Max -
@ IC (A) -0.1
-2
VCE (SAT) Max (mV) -30
-350
@ IC (A) -0.1
-2.5
@ IB (mA) -10
-150
fT Min (MHz) 150
RCE (SAT) (m) 96





Description

This ZXT10P20DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.






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