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The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use in mobile phones. Its compact 3x3mm package makes it ideal for today's extremely small data enabled phones. Its RF performance meets the requirements for IS-95/98/CDMA2000 & WCDMA Rel99 standards. The TQM713024 is designed on TriQuint's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. Selectable bias mode and a shutdown mode with low leakage current, improve talk and standby time. The output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power. The TQM713024 has robust performance into mismatch and excellent linearity margin under all operating conditions including the ability to operate in LP Mode all the way to full output power.
TQM713024 Maximum Ratings
Parameter
Symbol
Min.
Typ/Nom
Max.
Units
RF Input Power
PIN
-
0 for HPM 2 for LPM
10.0
dBm
Supply Voltage
VCC
0
3.4
5.0
Volts
Reference Voltage
VREF
0
2.85
3.5
Volts
Vmode (1 bit Bias Control)
Vmode
0
-
3.5
Volts
Case Operating Temperature
TCASE
-40
25
+100
°C
Storage Temperature
TSTORE
-55
25
+150
°C
Note 1: No damage assuming only one parameter is set at a time with all other parameters set at or below nominal value
TQM713024 Features
• InGaP HBT Technology • High Efficiency: 38% @ 28dBm • Capable of running as 0-bit PA in low bias mode to 28dBm • Supports new chipsets with Vref@2.6V • Optimized for 50 ohm System • Small 8-pin, 3x3mm module • Excellent Rx band noise performance • Lead-free 260°C RoHS Compliant • Full ESD Protection