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TQM6M4002, TQM713019, TQM7136

Table of contents:
Info of TQM6M4002
Info of TQM713019
Info of TQM7136

TQM6M4002, TQM713019, TQM7136 Selling Leads, Datasheet

MFG:Triquint Semiconductor Inc Category:RF and RFID Package Cooled:0623+ D/C:QFN-20

TQM6M4002, TQM713019, TQM7136 Datasheet download

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Part Number: TQM6M4002

Category: RF and RFID

MFG: Triquint Semiconductor Inc

Package Cooled: 0623+

D/C: QFN-20

Description: MODULE PWR-AMP CDMA 3V 10-LGA

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TQM6M4002 General Description

The advanced quad-band Transmit Module designed for mobile handset applications provides full RF transmit functionality in a size of only 36 mm2. The GSM850/900 and DCS/PCS power amplifier blocks including power control are combined with the low insertion loss quad-band pHEMT switch, Tx harmonics filtering, integrated switch decoder, four receive ports, and full ESD protection. This architecture eliminates the need for any PA-to-switch design effort for phone designers. All four Rx ports are frequency independent and allow flexible routing to the transceiver. Fabricated in high-reliability InGaP HBT / pHEMT technology, the module supports GPRS class 12 operation and provides 50 Ohms input and output impedances at all RF input and output ports. The module control inputs are CMOS compatible and has no need for an external reference voltage. With its excellent efficiency performance in all 4 bands, the power amplifier and switch module contributes to the overall talk-time targets of next generation mobile handset designs.

TQM6M4002 Features

• Ultra Compact Size 6.0x6.0x1.1mm3.
• High System Efficiency GSM850 40%, GSM900 45% , DCS/PCS 38%
• Integrated Power and SP6T Control
• Integrated SP6T pHEMT Switch
• Free choice of Rx ports for band selection
• Integrated Low Pass Tx Harmonics Filter
• Positive Supply Voltage 3.0 to 4.5 V.
• 50 Input and Output Impedances.
• GPRS Class 12 Compatible.
• CMOS Compatible Module Control Inputs.
• High-Reliability InGaP HBT Technology
• Ruggedness 30:1.

TQM6M4002 Typical Application

• GSM GPRS Handsets and Modems
• Dual-, Tri-, Quad-band Class 12 Compatible

TQM6M4002 Connection Diagram

TQM713019 Parameters

Technical/Catalog Information	TQM713019
Vendor	Triquint Semiconductor Inc
Category	RF and RFID
Package / Case	10-LGA
Voltage - Supply	3.2V ~ 4.2V
Current - Supply	450mA
Gain	29dB
Frequency	824MHz ~ 849MHz
RF Type	CDMA, CDMA2000, AMPS, IS-95
Packaging	Tape & Reel (TR)
Noise Figure	-
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TQM713019 TQM713019

TQM713019 General Description

The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use in mobile phones. Its extremely small 4x4mm package makes it ideal for today's compact data enabled phones. Its RF performance meets the requirements for products designed to IS-95/98 standards.
The TQM713019 is designed on TriQuint's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability, and ruggedness. Selectable bias mode and a shutdown mode with low leakage current improves talk and standby time. The output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power. The module is a 4x4mm land grid array with backside ground. The TQM713019 is footprint ompatible with industry standard 4x4mm CDMA PA modules.

TQM713019 Maximum Ratings

Symbol	Parameter	Absolute Maximum Value	Units
P_IN	RF Input Power	10	dBm
V_CC	Supply Voltage	0.0 to 5.0	V_DC
V_REF	Reference Voltage	0.0 to 3.5	V_DC
V_MODE	Vmode (1 bit Bias Control)	0.0 to 3.5	V_DC
T_CASE	Case Operating Temperature	-40 to +100
T_STORE	Storage Temperature	-55 to +150

Note: The part may not survive all maximums applied simultaneously.

TQM713019 Features

• InGaP HBT Technology
• High Efficiency: 41% CDMA
• Low Leakage Current: < 1uA
• Low Icq = 55mA
• Supports new chipsets with Vref @ 2.6V
• Capable of running as 0-bit PA in low bias mode to 28dBm
• Optimized for 50 system
• Small 10 pin 4x4mm module
• Excellent Rx band noise performance
• CDMA 1XRTT, 1XEV-DO compliant
• Full ESD protection

TQM713019 Connection Diagram

TQM7136 General Description

The TQM7136 is a 3V, 2 stage SiGe HBT Power Amplifier Module designed for use in obile phones. Its RF performance meets the requirements for products designed to IS-95/98 standards. The quiescent current of the TQM7136 is set by the base-band processor using two CMOS compatible ICQ control voltages (VCTRL1 and VCTRL2).

Overall current consumption of the device is minimized by selecting the lowest ICQ state available for each power output level. RF input and output matching is included within the module; therefore, minimal external circuitry is required.

The TQM7136 gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The small 6mm square surface mount package is ideal for new generation small and light phones.

TQM7136 Maximum Ratings

SYMBOL	Parameter	Absolute Maximum Value	Units
V_CC1, V_CC2	Power Supply Voltage, no RF Applied RF Applied	-0.5 to 6.0 -0.5 to 5.0	VDC
V_REF, V_CTRL1, and V_CTRL2	Bias reference voltages (VREF) and bias control voltage (VCTRL1 and VCTRL2).	-0.5 to 5.0	VDC
P_DISS	Power Dissipation	2.5	W
T_C	Case Temperature, Survival	-40 to +100
T_STG	Storage Temperature	-40 to +150
RF_IN	DC Grounded RF input, 50ohm RF impedance	0 to 0V	VDC
RF_OUT	DC Blocked RF output, 50 ohm RF impedance	-20V to 20V	VDC

Note: The part may not survive all maximums applied simultaneously.

TQM7136 Features

· High Efficiency
· Three quiescent current states
· CMOS compatible logic inputs
· Excellent ACP and ALT
· Small 8 pin 6x6mm module
· Internally matched input and output
· Full ESD Protection
· Low leakage current

TQM7136 Typical Application

· Cellular Band CDMA IS-95/98 based mobile phones.
· Single-Mode, Dual Mode, and Tri Mode CDMA/AMPS phones

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