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The advanced quad-band Transmit Module designed for mobile handset applications provides full RF transmit functionality in a size of only 36 mm2.
The GSM850/900 and DCS/PCS power amplifier blocks including power control are combined with the low insertion loss quad-band pHEMT switch, Tx harmonics filtering, integrated switch decoder, four receive ports, and full ESD protection. This architecture eliminates the need for any PA-to-switch design effort for phone designers. All four Rx ports are frequency independent and allow flexible routing to the transceiver. Fabricated in high-reliability InGaP HBT / pHEMT technology, the module supports GPRS class 12 operation and provides 50 Ohms input and output impedances at all RF input and output ports. The module control inputs are CMOS compatible and has no need for an external reference voltage. With its excellent efficiency performance in all 4 bands, the power amplifier and switch module contributes to the overall talktime targets of next generation mobile handset designs.
TQM6M4001 Maximum Ratings
Symbol
Parameter
Conditions
Absolute Maximum Value
Units
VBatt
Positive Supply Voltage
-0.5 to 5.5
V
Vmod_en
Module enable
-0.5 to 3.0
V
VTX
Tx enable
-0.5 to 3.0
V
VBS1
Band select 1
-0.5 to 3.0
V
VBS2
Band select 2
-0.5 to 3.0
V
Vramp
Power Control Voltage
-0.5 to 3.0
V
IBatt
DC Supply Current
2.5 max
A
PA Duty Cycle at Maximum Power
50 max [pulse time 2.3ms]
%
TJ
Junction Temperature
150 max
TSTORAGE
Storage Temperature
-55 to +150
TC
Operating Case (ambient) Temperature
-30 to +100
Pin
Maximum input power
RF input power applied
10
dBm
ESD ruggedness at Antenna port
IEC 61000 4 2 (330 , 150 pF
80001)
V
ESD ruggedness at Rx ports
HBM (1500 , 100 pF)
250
V
ESD ruggedness at all other ports
HBM (1500 , 100 pF)
1000
V
Note: The transmit module will survive over the full range of specified maximum ratings for any individual parameter, while all other parameters are nominal and no RF input signal is applied (unless otherwise stated). 1) Requires external inductor. Without external inductor, the ESD ruggedness at the antenna port is 4 kV according to IEC 61000-4-2. Please refer to the application note for further application details.
TQM6M4001 Features
• Ultra Compact Size 6.0x6.0x1.1mm3. • High System Efficiency GSM850 40%, GSM900 45% , DCS/PCS 38% • Integrated Power and SP6T Control • Integrated SP6T pHEMT Switch • Free choice of Rx ports for band selection • Integrated Low Pass Tx Harmonics Filter • Positive Supply Voltage 3.0 to 4.5 V. • 50 Input and Output Impedances. • GPRS Class 12 Compatible. • CMOS Compatible Module Control Inputs. • High-Reliability InGaP HBT Technology • Ruggedness 30:1.
TQM6M4001 Typical Application
• GSM GPRS Handsets and Modems • Dual-, Tri-, Quad-band Class 12 Compatible