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TPD1018F, TPD1024AS, TPD1024S

Table of contents:
Info of TPD1018F
Info of TPD1024AS
Info of TPD1024S

TPD1018F, TPD1024AS, TPD1024S Selling Leads, Datasheet

MFG:TOS Package Cooled:SOP-8 D/C:05+

TPD1018F, TPD1024AS, TPD1024S Datasheet download

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Part Number: TPD1018F

MFG: TOS

Package Cooled: SOP-8

D/C: 05+

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TPD1018F General Description

The TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output that can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protection and diagnostic functions.

TPD1018F Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source Voltage		VDS	60	V
Supply Voltage	DC Pulse	V_{DD (1)} V_{DD (2)}	25 60 (Rs = 1, T = 250ms)	V V
Input Voltage	DC Pulse	V_{IN (1)} V_{IN (2)}	-0.5~25 V_{DD (1)}+ 1.5 (t = 100ms)	V V
Output Current Input Current Power Dissipation		I_O I_IN P_D	0.5 ±10 300	A mA mW
Operating Temperature Junction Temperature Storage Temperature		T_opr T_j T_stg	-40~125 150 -55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling

Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TPD1018F Features

` A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (-MOS) on a single chip
` One side of load can be grounded to a high-side switch
` Can directly drive a power load from a microprocessor.
` Built-in protection against overvoltage, thermal shutdown, and load
short-circuiting
` Incorporates a diagnosis function that allows diagnosis output to be read externally in the event of load short-circuiting, overvoltage, or overheating.
` Low on-resistance : R_{DS (ON)} = 0.8 (max)
` Low operating current : I_DD=120A (typ.) (@V_DD = 13.2V, V_IN = 0V)
` 10-pin SSOP package for surface mounting

TPD1018F Connection Diagram

TPD1024AS Maximum Ratings

Characteristic	Symbol	Rating	Unit
Drain-source voltage	_{VDS (DC)}	40	V
Output current	I_D	1.5	A
Input voltage	V_GS	− 0.5 to 6	V
Power dissipation	P_D	1.2	W
Operating temperature	T_opr	− 40 to 85	°C
Junction temperature	T_j	150	°C
Storage temperature	T_stg	− 55 to 150	°C

TPD1024AS Features

` A monolithic power IC with a new structure combining a control block and a vertical power MOS FET(-MOS) on a single chip.
` Can directly drive a power load from a CMOS logic.
`Built-in protection against overvoltage, load short circuiting, and thermal shutdown.
`Low on resistance : R_DS _(ON) = 0.5 Ω (max) (@V_IN = 5 V, T_j = 25°C)
`Package : TPS Can be packed in tape.

TPD1024S Maximum Ratings

Characteristic		Symbol	Symbol	Unit
Drain-source voltage		V_{DS (DC)}	40	V
Output current		I_D	1.5	A
Input voltage		V_GS	−0.5 ~ 6	V
Power dissipation	Ta = 25°C	P_D	1	W
Power dissipation	Tc = 25°C	P_D	10	W
Operating temperature		T_opr	−40 ~ 85	°C
Junction temperature		T_j	150	°C
Storage temperature		T_stg	−55 ~ 150	°C

TPD1024S Features

`A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (-MOS) on a single chip.
`Can directly drive a power load from a CMOS logic.
`Built-in protection against overvoltage, load short circuiting, and
`Low on resistance : RDS (ON) = 0.5 Ω(max), (@V_IN = 5 V, T_j = 25°C)
`3-pin power-molded package usable for surface mounting.

TPD1024S Connection Diagram

Characteristic		Symbol	Rating	Unit
Drain-source voltage		V_DS (DC)	40	V
Output current		I_D	1.5	A
Input voltage VGS		V_GS	−0.5 ~ 6	V
Power dissipation	Ta = 25°C	P_D	1	W
Power dissipation	Tc = 25°C	P_D	10	W
Operating temperature		T_opr	−40 ~ 85	°C
Junction temperature		T_j	150	°C
Storage temperature		T_stg	−55 ~ 150	°C

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