TPD1018F

`  A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (-MOS) on a single chip
`  One side of load can be grounded to a high-side switch
`  Can directly drive a power load from a microprocessor.
`  Built-in protection against overvoltage, thermal shutdown, and load
short-circuiting
`  Incorporates a diagnosis function that allows diagnosis output to be read externally in the event of load short-circuiting, overvoltage, or overheating.
`  Low on-resistance : R_{DS (ON)} = 0.8 (max)
`  Low operating current : I<sub>DD</sub> =120A (typ.) (@V<sub>DD</sub> = 13.2V, V<sub>IN</sub> = 0V)
`  10-pin SSOP package for surface mounting

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling

Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

The TPD1018F is a monolithic power IC for high-side switches. The  TPD1018F IC has a vertical MOS FET output that can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protection and diagnostic functions.