DescriptionThe TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MO5 FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions. The features of TPD1018 can be summariz...
TPD1018: DescriptionThe TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MO5 FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device o...
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The TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MO5 FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions.
The features of TPD1018 can be summarized as (1)a monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MO5 FET (-MOS) on a single chip; (2)one side of load can be grounded to a high-side switch; (3)can directly drive a power load from a microprocessor; (4)built-in protection against overvoltage, overheating, and we load short circuiting; (5)incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, overvoltage, or overheating; (6)low on resistance : RDS(ON)=0.8 (Max); (7)low operating current: IDD=120A VDD=13.2V, VIN=0; (8)10-pin SSOP package for surface mounting. .
The absolute maximum ratings of TPD1018 are (1)drain-source voltage VDS: 60V; (2)supply voltage DC/pulse VDD(1)/VDD(2): 25/60V; (3)input voltage DC/pulse: -0.5~25V/VDD(1)+1.5(t-100ms)V; (4)output current IO: 0.5mA; (5)intput current IIN: ±10mA; (6)power dissipation Ta =25°C PD: 300mW; (7)operating temperature Topr: -40~125°C; (8)junction temperature Tj: 150°C; (9)storage temperature Tstg: -55~150°C.