TPD1032, TPD1033, TPD1033F Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:Sop8 D/C:04+
TPD1032, TPD1033, TPD1033F Datasheet download
Part Number: TPD1032
MFG: TOSHIBA
Package Cooled: Sop8
D/C: 04+
MFG:TOSHIBA Package Cooled:Sop8 D/C:04+
TPD1032, TPD1033, TPD1033F Datasheet download
MFG: TOSHIBA
Package Cooled: Sop8
D/C: 04+
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PDF/DataSheet Download
Datasheet: TPD1032F
File Size: 115167 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPD1033F
File Size: 329214 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPD1033F
File Size: 329214 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The TPD1033F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output that can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protection and diagnostic
functions.
Characteristic |
Symbol |
Rating |
Unite | |
Drain-source voltage |
VDS |
60 |
V | |
Supply voltage | DC |
VDD (1) |
25 |
V |
Pulse |
VDD (2) |
60 (Rs = 1,= 250 ms) | ||
Input voltage | DC |
VIN (1) |
-0.5 ~ 12 |
V |
Pulse |
VIN (2) |
VDD (1) + 1.5 (t = 100 ms) | ||
Diagnosis output voltage |
VDIAG |
-0.5 ~ 25 |
V | |
Output current |
IO |
Internally limited |
A | |
Input current |
IIN |
± 10 |
mA | |
Diagnosis output current |
IDIAG |
5 |
mA | |
Power dissipation (Ta = 25) |
PD |
1.4 Note 1 |
W | |
2.4 Note 2 | ||||
Operating temperature |
Topr |
- 40 ~ 110 |
||
Channel temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
- 55 ~ 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (-MOS) on a single chip
One side of load can be grounded to a high-side switch
Can directly drive a power load from a microprocessor.
Built-in protection against thermal shutdown and load short-circuiting.
Incorporates a diagnosis function that allows diagnosis output to be read externally in the event of load short-circuiting, opening, or overheating.
Up to -10 V of counterelectromotive force from an L load can be applied.
Low on-resistance : RON = 220 m (max)
Low operating current : IDD = 1 mA (typ.), (@VDD = 12 V, VIN = 0 V)
8-pin SOP package for surface mounting can be packed in tape.