Features: `A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (-MOS) on a single chip.`Can directly drive a power load from a CMOS logic.`Built-in protection against overvoltage, load short circuiting, and`Low on resistance : RDS (ON) = 0.5 Ω(ma...
TPD1024S: Features: `A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (-MOS) on a single chip.`Can directly drive a power load from a CMOS logic.`Built-in prot...
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`A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (-MOS) on a single chip.
`Can directly drive a power load from a CMOS logic.
`Built-in protection against overvoltage, load short circuiting, and
`Low on resistance : RDS (ON) = 0.5 Ω(max), (@VIN = 5 V, Tj = 25°C)
`3-pin power-molded package usable for surface mounting.
Characteristic |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDS (DC) |
40 |
V | |
Output current |
ID |
1.5 |
A | |
Input voltage VGS |
VGS |
−0.5 ~ 6 |
V | |
Power dissipation |
Ta = 25°C |
PD |
1 |
W |
Tc = 25°C |
10 | |||
Operating temperature |
Topr |
−40 ~ 85 |
°C | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
−55 ~ 150 |
°C |
Characteristic |
Symbol |
Symbol |
Unit | |
Drain-source voltage |
VDS (DC) |
40 |
V | |
Output current |
ID |
1.5 |
A | |
Input voltage |
VGS |
−0.5 ~ 6 |
V | |
Power dissipation |
Ta = 25°C |
PD |
1 |
W |
Tc = 25°C |
10 | |||
Operating temperature |
Topr |
−40 ~ 85 |
°C | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
−55 ~ 150 |
°C |