TIC108DGEBOGEN, TIC108M, TIC108N Selling Leads, Datasheet
MFG:ti Package Cooled:ti D/C:dc96
TIC108DGEBOGEN, TIC108M, TIC108N Datasheet download
Part Number: TIC108DGEBOGEN
MFG: ti
Package Cooled: ti
D/C: dc96
TIC108DGEBOGEN, TIC108M, TIC108N
- Table of contents:
Info of TIC108DGEBOGEN
Info of TIC108M
Info of TIC108N
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About TIC106
PDF/DataSheet Download
Datasheet: TIC106
File Size: 168968 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
About TIC108M
PDF/DataSheet Download
Datasheet: TIC108M
File Size: 166276 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
About TIC108N
PDF/DataSheet Download
Datasheet: TIC108N
File Size: 166276 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
TIC108M Maximum Ratings
| RATING | SYMBOL | VALUE | UNIT | |
| Repetitive peak off-state voltage (see Note 1) |
TIC108D TIC108M TIC108S TIC108N |
VDRM |
400 600 700 800 |
V |
| Repetitive peak reverse voltage | TIC108D TIC108M TIC108S TIC108N |
VRRM | 400 600 700 800 |
V |
| Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 5 | A | |
| Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) | IT(AV) | 3.2 | A | |
| Surge on-state current (see Note 4) |
ITM | 30 | A | |
| Peak positive gate current (pulse width £ 300 s) | IGM | 0.2 | A | |
| Peak gate power dissipation (pulse width £ 300 s) | PGM | 1.3 | W | |
| Average gate power dissipation (see Note 5) |
PG(AV) | 0.3 | W | |
| Operating case temperature range | T C | -40 to +110 | °C | |
| Storage temperature range | Tstg | -40 to +125 | °C | |
| Lead temperature 1.6 mm from case for 10 seconds | T L | 230 | ||
TIC108M Features
5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 1 mA
TIC108N Maximum Ratings
| RATING | SYMBOL | VALUE | UNIT | |
| Repetitive peak off-state voltage (see Note 1) |
TIC108D TIC108M TIC108S TIC108N |
VDRM |
400 600 700 800 |
V |
| Repetitive peak reverse voltage | TIC108D TIC108M TIC108S TIC108N |
VRRM | 400 600 700 800 |
V |
| Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 5 | A | |
| Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) | IT(AV) | 3.2 | A | |
| Surge on-state current (see Note 4) |
ITM | 30 | A | |
| Peak positive gate current (pulse width £ 300 s) | IGM | 0.2 | A | |
| Peak gate power dissipation (pulse width £ 300 s) | PGM | 1.3 | W | |
| Average gate power dissipation (see Note 5) |
PG(AV) | 0.3 | W | |
| Operating case temperature range | T C | -40 to +110 | °C | |
| Storage temperature range | Tstg | -40 to +125 | °C | |
| Lead temperature 1.6 mm from case for 10 seconds | T L | 230 | ||
TIC108N Features
5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 1 mA
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