TIC106A

DescriptionThe TIC106A is designed as one kind of silicon bidirectional triode thyristor, TIC106Ahas some points of features: (1)5 A Continuous On-State Current; (2)30 A Surge-Current; (3)Glass Passivated Wafer; (4)100 V to 800 V Off-State Voltage; (5)Max IGT of 200 uA; (6)Compliance to ROHS. And ...

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SeekIC No. : 004519072 Detail

TIC106A: DescriptionThe TIC106A is designed as one kind of silicon bidirectional triode thyristor, TIC106Ahas some points of features: (1)5 A Continuous On-State Current; (2)30 A Surge-Current; (3)Glass Pass...

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Part Number:
TIC106A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Description

The TIC106A is designed as one kind of silicon bidirectional triode thyristor, TIC106A has some points of features: (1)5 A Continuous On-State Current; (2)30 A Surge-Current; (3)Glass Passivated Wafer; (4)100 V to 800 V Off-State Voltage; (5)Max IGT of 200 uA; (6)Compliance to ROHS. And this device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

The absolute maximum ratings of the TIC106A can be summarized as:(1)Repetitive peak off-state voltage: 100 V;(2)Repetitive peak reverse voltage: 100 V;(3)Continuous on-state current at (or below) 80°C case tempera: 5 A;(4)Average on-state current (180° conduction angle) at(or below) 80°C case temperature: 3.2 A;(5)Surge on-state current: 30 A;(6)Peak positive gate current (pulse width 300 s): 0.2 A;(7)Peak power dissipation (pulse width 300 s): 1.3 W;(8)Average gate power dissipation: 0.3 W;(9)Operating case temperature range: -40 to +110 °C;(10)Storage temperature range: -40 to +125 °C;(11)Lead temperature 1.6 mm from case for 10 seconds: 230 °C. If you want to know more information about TIC106A, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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