TIC116B, TIC116D, TIC116E Selling Leads, Datasheet
MFG:TI Package Cooled:TO-220 D/C:06+
TIC116B, TIC116D, TIC116E Datasheet download
Part Number: TIC116B
MFG: TI
Package Cooled: TO-220
D/C: 06+
MFG:TI Package Cooled:TO-220 D/C:06+
TIC116B, TIC116D, TIC116E Datasheet download
MFG: TI
Package Cooled: TO-220
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: TIC106
File Size: 168968 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIC116D
File Size: 114526 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIC106
File Size: 168968 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage (see Note 1) |
TIC116D TIC116M TIC116S TIC116N |
VDRM |
400 600 700 800 |
V |
Repetitive peak reverse voltage | TIC116D TIC116M TIC116S TIC116N |
VRRM | 400 600 700 800 |
V |
Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 8 | A | |
Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) | IT(AV) | 5 | A | |
Surge on-state current (see Note 4) |
ITM | 80 | A | |
Peak positive gate current (pulse width £ 300 ms) | IGM | 3 | A | |
Peak gate power dissipation (pulse width £ 300 ms) | PGM | 5 | W | |
Average gate power dissipation (see Note 5) |
PG(AV) | 1 | W | |
Operating case temperature range | T C | -40 to +110 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Lead temperature 1.6 mm from case for 10 seconds | T L | 230 |
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 20 mA