TIC106S, TIC108, TIC108D Selling Leads, Datasheet
MFG:BOURNS Package Cooled:9800 D/C:TO
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TIC106S, TIC108, TIC108D Datasheet download
Part Number: TIC106S
MFG: BOURNS
Package Cooled: 9800
D/C: TO
MFG:BOURNS Package Cooled:9800 D/C:TO
TIC106S, TIC108, TIC108D Datasheet download
MFG: BOURNS
Package Cooled: 9800
D/C: TO
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PDF/DataSheet Download
Datasheet: TIC106S
File Size: 168968 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIC108
File Size: 166276 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIC108D
File Size: 166276 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage (see Note 1) |
TIC106D TIC106M TIC106S TIC106N |
VDRM |
400 600 700 800 |
V |
Repetitive peak reverse voltage | TIC106D TIC106M TIC106S TIC106N |
VRRM | 400 600 700 800 |
V |
Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 5 | A | |
Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) |
IT(AV) | 3.2 | A | |
Surge on-state current (see Note 4) |
ITM | 30 | A | |
Peak positive gate current (pulse width £ 300 s) | IGM | 0.2 | A | |
Peak gate power dissipation (pulse width £ 300 s) |
PGM | 1.3 | W | |
Average gate power dissipation (see Note 5) |
PG(AV) | 0.3 | W | |
Operating case temperature range | TC | -40 to +110 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Lead temperature 1.6 mm from case for 10 seconds | TL | 230 |
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 200 µA
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage (see Note 1) |
TIC108D TIC108M TIC108S TIC108N |
VDRM |
400 600 700 800 |
V |
Repetitive peak reverse voltage | TIC108D TIC108M TIC108S TIC108N |
VRRM | 400 600 700 800 |
V |
Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 5 | A | |
Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) | IT(AV) | 3.2 | A | |
Surge on-state current (see Note 4) |
ITM | 30 | A | |
Peak positive gate current (pulse width £ 300 s) | IGM | 0.2 | A | |
Peak gate power dissipation (pulse width £ 300 s) | PGM | 1.3 | W | |
Average gate power dissipation (see Note 5) |
PG(AV) | 0.3 | W | |
Operating case temperature range | T C | -40 to +110 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Lead temperature 1.6 mm from case for 10 seconds | T L | 230 |
5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 1 mA