Features: 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mAPinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage TIC126DTIC126MTIC126STIC126N VRRM 400600700800 V Repetitive peak ...
TIC126N: Features: 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mAPinoutSpecifications RATING SYMBOL VALUE UNIT Repeti...
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12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 20 mA
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage | TIC126D TIC126M TIC126S TIC126N |
VRRM | 400 600 700 800 |
V |
Repetitive peak off-state voltage | TIC126D TIC126M TIC126S TIC126N |
VRRM | 400 600 700 800 |
V |
Continuous on-state current at (or below) 70°C case temperature (see Note 1) | IT(RMS) | 12 | A | |
Average on-state current (180° conduction angle) at (or below) 70°C case temperature (see Note 2) | IT(AV) | 7.5 | A | |
Surge on-state current at (or below) 25°C case temperature (see Note 3) | ITM | 100 | A | |
Peak positive gate current (pulse width £ 300 s) | IGM | 3 | A | |
Peak gate power dissipation (pulse width £ 300 s) | PGM | 5 | W | |
Average gate power dissipation (see Note 4) | PG(AV) | 1 | W | |
Operating case temperature range | TC | -40 to +110 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Lead temperature 1.6 mm from case for 10 seconds | TL | 230 | °C |