Features: Sensitive Gate Triacs 2.5 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrant 1)PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC201DTIC201MTIC201STIC201N VDRM 400600700800 V Full-cycle ...
TIC201N: Features: Sensitive Gate Triacs 2.5 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrant 1)PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive pea...
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Sensitive Gate Triacs
2.5 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 5 mA (Quadrant 1)
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage (see Note 1) | TIC201D TIC201M TIC201S TIC201N |
VDRM |
400 600 700 800 |
V |
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) | IT(RMS) | 2.5 | A | |
Peak on-state surge current full-sine-wave (see Note 3) | ITSM | 12 | A | |
Peak on-state surge current half-sine-wave (see Note 4) | ITSM | 14 | A | |
Peak gate current | IGM | ±0.2 | A | |
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 s) | PGM | 1.3 | W | |
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) | PG(AV) | 0.3 | W | |
Operating case temperature range | TC | -40 to +110 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Lead temperature 1.6 mm from case for 10 seconds | TL | 230 | °C |