MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 MAX D/C:TO
STY60NM60, STYN1665, STZ150NF55T Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 247 MAX
D/C: TO
Description: MOSFET N-CH 600V 60A MAX247
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Datasheet: STY60NM60
File Size: 295429 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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Datasheet: STY100NS20FD
File Size: 266464 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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Datasheet: STZ006(415/110)
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| Technical/Catalog Information | STY60NM60 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 7300pF @ 25V |
| Power - Max | 560W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 266nC @ 10V |
| Package / Case | MAX247? |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STY60NM60 STY60NM60 497 3268 5 ND 49732685ND 497-3268-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
600 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
60 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
37.8 | A |
| IDM(`) |
Drain Current (pulsed) |
240 | A |
| PTOT |
Total Dissipation at Tc = 25 |
560 | W |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=15K) |
6 |
KV |
| Derating Factor |
4.5 |
W/°C | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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