MOSFET N-Ch 200 Volt 100 A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 0.024 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | Max247 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
200 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 | V |
VGS |
Gate-source Voltage |
±20 | V |
ID |
Drain Current (continuous) at Tc = 25 |
100 | A |
ID |
Drain Current (continuous) at Tc = 100 |
63 | A |
IDM(`) |
Drain Current (pulsed) |
400 | A |
PTOT |
Total Dissipation at Tc = 25 |
450 | W |
Derating Factor |
3.6 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
25 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STY100NS20FD has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Technical/Catalog Information | STY100NS20FD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 7900pF @ 25V |
Power - Max | 450W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 360nC @ 10V |
Package / Case | MAX247? |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STY100NS20FD STY100NS20FD 497 5321 5 ND 49753215ND 497-5321-5 |