STY140NS10

MOSFET N-Ch 100 Volt 140 A

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SeekIC No. : 00162651 Detail

STY140NS10: MOSFET N-Ch 100 Volt 140 A

floor Price/Ceiling Price

Part Number:
STY140NS10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : Max247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : Max247
Resistance Drain-Source RDS (on) : 0.009 Ohms
Continuous Drain Current : 140 A


Application

·HIGH CURRENT, HIGH SWITCHING SPEED
·SWITCH MODE POWER SUPPLY (SMPS)



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

100 V
VDGR

Drain- gate Voltage (RGS = 20 k)

100 V
VGS

Gate-source Voltage

±20 V
ID

Drain Current (continuous) at Tc = 25

140 A
ID

Drain Current (continuous) at Tc = 100

99 A
IDM(`)

Drain Current (pulsed)

560 A
Ptot

Total Dissipation at Tc = 25

450 W

Derating Factor

3 W/

EAS(1)

Single Pulse Avalanche Energy

2900

mJ

dv/dt(2)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

-55 to 175
Tj

Operating Junction Temperature

-55 to 175
(`)Pulse width limited by safe operating area           (1) Starting Tj = 25 , ID = 70A, VDD= 50V
                                                                                   (2)ISD 140A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.



Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STY140NS10 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Parameters:

Technical/Catalog InformationSTY140NS10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C140A
Rds On (Max) @ Id, Vgs11 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds 12600pF @ 25V
Power - Max450W
PackagingTube
Gate Charge (Qg) @ Vgs600nC @ 10V
Package / CaseMAX247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STY140NS10
STY140NS10
497 3267 5 ND
49732675ND
497-3267-5



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