MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:04+
STY26600, STY30NA50, STY30NK90Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-3P
D/C: 04+
Description: MOSFET N-CH 900V 26A MAX247
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Datasheet: STY100NS20FD
File Size: 266464 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STY30NA50
File Size: 49852 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STY100NS20FD
File Size: 266464 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The Max247TM package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
500 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
30 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
19 | A |
| IDM(`) |
Drain Current (pulsed) |
120 | A |
| Ptot |
Total Dissipation at Tc = 25 |
300 | W |
|
Derating Factor |
2.4 | W/ | |
| Tstg |
Storage Temperature |
-55 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
| Technical/Catalog Information | STY30NK90Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 14A, 10V |
| Input Capacitance (Ciss) @ Vds | 12000pF @ 25V |
| Power - Max | 450W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 490nC @ 10V |
| Package / Case | MAX247? |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STY30NK90Z STY30NK90Z 497 4431 5 ND 49744315ND 497-4431-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source voltage (VGS = 0) |
900 |
V |
|
VGS |
Gate- source voltage |
± 30 |
V |
|
ID |
Drain current (continuous) at TC = 25 |
26 |
A |
|
ID |
Drain current (continuous) at TC = 100 |
16 |
A |
|
IDM 1 |
Drain current (pulsed) |
104 |
A |
|
Ptot |
Total dissipation at TC = 25 |
450 |
W |
| Derating Factor |
3.57 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
|
dv/dt 2 |
Peak diode recovery voltage slope |
4.5 |
V/ns |
|
Tstg |
Storage temperature |
-65 to 150 |
|
|
Tj |
Max. operating junction temperature |
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