MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:04+
STY60NA30, STY60NK30Z, STY60NM50 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-3P
D/C: 04+
Description: MOSFET N-CH 500V 60A MAX247
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PDF/DataSheet Download
Datasheet: STY100NS20FD
File Size: 266464 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STY60NK30Z
File Size: 192110 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STY60NM50
File Size: 269945 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STY60NK30Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 7200pF @ 25V |
| Power - Max | 450W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Package / Case | MAX247? |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STY60NK30Z STY60NK30Z 497 4432 5 ND 49744325ND 497-4432-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements
ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
300 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
300 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
60 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
37.5 | A |
| IDM(.) |
Drain Current (pulsed) |
240 | A |
| PTOT |
Total Dissipation at Tc = 25 |
450 | W |
|
Derating Factor |
3.57 | W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
| Technical/Catalog Information | STY60NM50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 7500pF @ 25V |
| Power - Max | 560W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 266nC @ 10V |
| Package / Case | MAX247? |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STY60NM50 STY60NM50 497 2775 5 ND 49727755ND 497-2775-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
500 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
60 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
37.8 | A |
| IDM(`) |
Drain Current (pulsed) |
240 | A |
| PTOT |
Total Dissipation at Tc = 25 |
560 | W |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=15K) |
6 |
KV |
| Derating Factor |
4.5 |
W/°C | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
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