MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:2007
STB230NH03L, STB25NM50, STB25NM60N-1 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-263
D/C: 2007
Description: MOSFET N-CH 600V 21A I2PAK
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PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB25NM50N
File Size: 694444 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB25NM60N-1
File Size: 280111 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STB230NH03L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 4700pF @ 10V |
| Power - Max | 300W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STB230NH03L STB230NH03L 497 7942 6 ND 49779426ND 497-7942-6 |
| Technical/Catalog Information | STB25NM60N-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 50V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 84nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STB25NM60N 1 STB25NM60N1 497 5730 ND 4975730ND 497-5730 |
The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
| Symbol | Parameter |
Value |
Unit | |
| TO-220/I²PAK TO-247/D²PAK |
TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±25 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
12.8 |
12.8(*) |
A |
| IDM(1) | Drain Current (pulsed) |
80 |
80(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
40 |
W |
| Derating Factor |
1.28 |
0.32 |
W/ | |
| dv/dt (2) | Peak Diode Recovery voltage slope |
TBD |
V/ns | |
| Tstg | Storage Temperature |
55 to 150 |
||
| Tj | Max. Operating Junction Temperature |
150 |
||
The MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies .
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