SSU2N60B, SSU2N60BTU, SSU2N80A Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-251 D/C:04+
SSU2N60B, SSU2N60BTU, SSU2N80A Datasheet download
Part Number: SSU2N60B
MFG: FAIRCHILD
Package Cooled: TO-251
D/C: 04+
SSU2N60B, SSU2N60BTU, SSU2N80A
- Table of contents:
Info of SSU2N60B
Info of SSU2N60BTU
Info of SSU2N80A
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About SSU2N60B
PDF/DataSheet Download
Datasheet: SSU2N60B
File Size: 660327 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About SSU1N45
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Datasheet: SSU1N45
File Size: 106631 KB
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About SSU2N80A
PDF/DataSheet Download
Datasheet: SSU2N80A
File Size: 660716 KB
Manufacturer:
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SSU2N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSU2N60B Maximum Ratings
| Symbol | Parameter | SSR2N60B / SSU2N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
1.8 | A |
| 1.1 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 120 | mJ |
| IAR | Avalanche Current (Note 1) | 1.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
2.5 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
44 | W | |
| 0.35 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSU2N60B Features
• 1.8A, 600V, R DS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
SSU2N80A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
800 |
V |
|
ID |
Continuous Drain Current (TC=25 ) |
1.7 |
A |
|
Continuous Drain Current (TC=100OC ) |
1.1 | ||
|
IDM |
Drain Current-Pulsed |
6.8 |
A |
|
VGS |
Gate-to-Source Voltage |
+_ 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
213 |
mJ |
|
IAR |
Avalanche Current |
1.7 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
2.0 |
V/ns |
|
PD |
Total Power Dissipation (TA=25OC ) * |
45 |
W |
|
Total Power Dissipation (TC=25OC ) |
0.36 | ||
|
TJ , TSTG |
Operating Junction and |
- 55 to +150 |
OC |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SSU2N80A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 800V
Low RDS(ON) : 4.688 W (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 800V
Low RDS(ON) : 4.688 W (Typ.)
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