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SSU1N60B

Features: • 0.9A, 600V, R DS(on) = 12Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSR1N60B / SSU1N60B Units VDSS Dr...

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SeekIC No. : 004505479 Detail

SSU1N60B: Features: • 0.9A, 600V, R DS(on) = 12Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Im...

SSU1N60B Data Sheet

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Part Number:
SSU1N60B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.9A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter SSR1N60B / SSU1N60B Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 0.9 A
0.57 A
IDM Drain Current - Pulsed (Note 1) 3.0 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy(Note 2) 50 mJ
IAR Avalanche Current (Note 1) 0.9 A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
 2.5 W
Power Dissipation (TC = 25°C)
               - Derate above 25°C		 28 W
0.22 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors SSU1N60B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These SSU1N60B are well suited for high efficiency switch mode power supplies.




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