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SSU1N50B

Features: • 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effect transistors S...

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SeekIC No. : 004505478 Detail

SSU1N50B: Features: • 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• I...

SSU1N50B Data Sheet

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Part Number:
SSU1N50B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Description

These N-Channel enhancement mode power field effect transistors SSU1N50B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These SSU1N50B are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.




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