SSU1N60A, SSU1N60ATU, SSU1N60B Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-251 D/C:2001
SSU1N60A, SSU1N60ATU, SSU1N60B Datasheet download
Part Number: SSU1N60A
MFG: FAIRCHILD
Package Cooled: TO-251
D/C: 2001
SSU1N60A, SSU1N60ATU, SSU1N60B
- Table of contents:
Info of SSU1N60A
Info of SSU1N60ATU
Info of SSU1N60B
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About SSU1N60A
PDF/DataSheet Download
Datasheet: SSU1N60A
File Size: 328629 KB
Manufacturer: Samsung Electronics Inc
Download : Click here to Download
About SSU1N45
PDF/DataSheet Download
Datasheet: SSU1N45
File Size: 106631 KB
Manufacturer:
Download : Click here to Download
About SSU1N60B
PDF/DataSheet Download
Datasheet: SSU1N60B
File Size: 652326 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSU1N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSU1N60B Maximum Ratings
| Symbol | Parameter | SSR1N60B / SSU1N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.9 | A |
| 0.57 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 3.0 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 50 | mJ |
| IAR | Avalanche Current (Note 1) | 0.9 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 2.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
2.5 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
28 | W | |
| 0.22 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSU1N60B Features
• 0.9A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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