SSU4N60A, SSU4N60B, SSU7301C25J Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-251/252 D/C:05+
SSU4N60A, SSU4N60B, SSU7301C25J Datasheet download
Part Number: SSU4N60A
MFG: FAIRCHILD
Package Cooled: TO-251/252
D/C: 05+
SSU4N60A, SSU4N60B, SSU7301C25J
- Table of contents:
Info of SSU4N60A
Info of SSU4N60B
Info of SSU7301C25J
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About SSU4N60A
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Datasheet: SSU4N60A
File Size: 168592 KB
Manufacturer:
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About SSU4N60B
PDF/DataSheet Download
Datasheet: SSU4N60B
File Size: 653179 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About SSU1N45
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Datasheet: SSU1N45
File Size: 106631 KB
Manufacturer:
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SSU4N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSU4N60B Maximum Ratings
| Symbol | Parameter | SSR4N60B / SSU4N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.8 | A |
| 1.8 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 11.2 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 240 | mJ |
| IAR | Avalanche Current (Note 1) | 2.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
2.5 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
49 | W | |
| 0.39 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSU4N60B Features
• 2.8A, 600V, R DS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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