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SSU4N60B

Features: • 2.8A, 600V, R DS(on) = 2.5Ω @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 14 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSR4N60B / SSU4N60B Units VDSS Dra...

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SeekIC No. : 004505483 Detail

SSU4N60B: Features: • 2.8A, 600V, R DS(on) = 2.5Ω @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 14 pF)• Fast switching• 100% avalanche tested• Imp...

SSU4N60B Data Sheet

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Part Number:
SSU4N60B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2.8A, 600V, R DS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter SSR4N60B / SSU4N60B Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 2.8 A
1.8 A
IDM Drain Current - Pulsed (Note 1) 11.2 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy(Note 2) 240 mJ
IAR Avalanche Current (Note 1) 2.8 A
EAR Repetitive Avalanche Energy (Note 1) 4.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
 2.5 W
Power Dissipation (TC = 25°C)
                - Derate above 25°C		 49 W
0.39 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors SSU4N60B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These SSU4N60B are well suited for high efficiency switch mode power supplies.




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