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Pulsed drain current,tp limited by Tjmax TA = 25 °C
ID puls
3
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation,TA = 25°C
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
SPN03N60S5 Features
• New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPN04N60S5 Parameters
Technical/Catalog Information
SPN04N60S5
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25° C
800mA
Rds On (Max) @ Id, Vgs
950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds
600pF @ 25V
Power - Max
1.8W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
17nC @ 10V
Package / Case
SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature
Standard
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
SPN04N60S5 SPN04N60S5
SPN04N60S5 Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current TA = 25 °C TA = 70 °C
ID
0.8 0.65
A
Pulsed drain current,tp limited by Tjmax TA = 25 °C
ID puls
3
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation,TA = 25°C
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
SPN04N60S5 Features
• New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance