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SPN01N60S5, SPN02N60S5, SPN030024-TR

Table of contents:
Info of SPN01N60S5
Info of SPN02N60S5
Info of SPN030024-TR

SPN01N60S5, SPN02N60S5, SPN030024-TR Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOT-223 D/C:SOT-223

SPN01N60S5, SPN02N60S5, SPN030024-TR Datasheet download

Five Points

Part Number: SPN02N60S5

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SOT-223

D/C: SOT-223

Description: MOSFET N-CH 600V 0.4A SOT-223

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SPN01N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_A = 25 °C T_A = 100 °C	I_D	0.3 0.2	A
Pulsed drain current, tp = 1ms 1) T_A= 25 °C	I_{D puls}	1.6	A
Reverse diode d v/d t I_S= 0.3 A, V_DS< V_DSS, di/dt = 100 A/µs, T_jmax= 150 °C	dv/d t	6	kV/µs
Gate source voltage	V_GS	±20	V
Power dissipation T_A = 25 °C	P_tot	1.8	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPN01N60S5 Features

· New revolutionary high voltage technology
· Ultra low gate charge
· Extreme d v/d t rated
· Optimized capacitances
· Improved noise immunity

SPN02N60S5 Parameters

Technical/Catalog Information	SPN02N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	400mA
Rds On (Max) @ Id, Vgs	3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.4nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPN02N60S5 SPN02N60S5

SPN02N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TA = 25 °C TA = 70 °C	I_D	0.4 0.3	A
Pulsed drain current,t_p limited by T_jmax TA = 25 °C	I_{D puls}	2.2	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation,TA = 25°C	P_tot	1.8	W
Operating and storage temperature	T_j , T_stg	-55... +150	°C

SPN02N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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