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SPN010020, SPN01N50M2, SPN01N60C3

Table of contents:
Info of SPN010020
Info of SPN01N50M2
Info of SPN01N60C3

SPN010020, SPN01N50M2, SPN01N60C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TSOP-14 D/C:0442+

SPN010020, SPN01N50M2, SPN01N60C3 Datasheet download

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Part Number: SPN01N60C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TSOP-14

D/C: 0442+

Description: MOSFET N-CH 650V 0.3A SOT-223

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SPN01N50M2 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	0.33 0.2	A
Pulsed drain current, tp = 1ms 1) T_C = 25 °C	I_{D puls}	0.7	A
Reverse diode d v/d t I_S= 0.33 A, VDS< V_DSS, di/dt = 100 A/µs, T_jmax= 150 °C	dv/d t	6	kV/µs
Gate source voltage	V_GS	±20	V
Power dissipation T_C = 25 °C	P_tot	1.8	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPN01N50M2 Features

· New revolutionary high voltage technology
· Ultra low gate charge
· Extreme d v/d t rated
· Optimized capacitances
· Improved noise immunity
· Former development designation: SPUx7N60S5/SPDx7N60S5

SPN01N60C3 Parameters

Technical/Catalog Information	SPN01N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	300mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	100pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPN01N60C3 SPN01N60C3

SPN01N60C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TA = 25 °C TA = 70 °C	I_D	0.3 0.2	A
Pulsed drain current,tp limited by Tjmax TA = 25 °C	I_{D puls}	1.6	A
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation,TA = 25°C	P_tot	1.8	W
Operating and storage temperature	T_j , T_stg	-55... +150	°C

SPN01N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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