MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TSOP-14 D/C:0442+
SPN010020, SPN01N50M2, SPN01N60C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TSOP-14
D/C: 0442+
Description: MOSFET N-CH 650V 0.3A SOT-223
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PDF/DataSheet Download
Datasheet: SPN01N50M2
File Size: 45099 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPN01N50M2
File Size: 45099 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPN01N60C3
File Size: 233782 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 0.33 0.2 |
A |
| Pulsed drain current, tp = 1ms 1) TC = 25 °C |
ID puls | 0.7 | |
| Reverse diode d v/d t IS = 0.33 A, VDS< VDSS, di/dt = 100 A/µs, Tjmax = 150 °C |
dv/d t | 6 | kV/µs |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 1.8 | W |
| Operating and storage temperature | Tj , Tstg | -55... +150 | °C |
| Technical/Catalog Information | SPN01N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 300mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 100pF @ 25V |
| Power - Max | 1.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 5nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPN01N60C3 SPN01N60C3 |
| Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TA = 25 °C TA = 70 °C |
ID |
0.3 0.2 |
A |
| Pulsed drain current,tp limited by Tjmax TA = 25 °C |
ID puls |
1.6 | |
| Gate source voltage static |
VGS |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
| Power dissipation,TA = 25°C |
Ptot |
1.8 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
• New revolutionary high voltage technology
• Ultra low gate charge
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