Position: Home  > All Categories> Integrated Circuits (ICs) > SPN02N60S5

SPN02N60S5

MOSFET TRANSISTOR

product image

SPN02N60S5 Picture
See larger image
SeekIC No. : 00162516 Detail

SPN02N60S5: MOSFET TRANSISTOR

SPN02N60S5 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SPN02N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : 3.5 V Continuous Drain Current : 400 mA
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223-4 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 400 mA
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 3 Ohms
Package / Case : SOT-223-4
Gate-Source Breakdown Voltage : 3.5 V


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
0.4
0.3
A
Pulsed drain current,tp limited by Tjmax
TA = 25 °C
ID puls
2.2
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation,TA = 25°C
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPN02N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C400mA
Rds On (Max) @ Id, Vgs3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max1.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.4nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPN02N60S5
SPN02N60S5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Undefined Category
VI-B63-IU
X27 589
Resistors
A101G
3006P-1-205LF
View more