SPN01N60C3

MOSFET COOL MOS PWR TRANS 650V .3A

product image

SPN01N60C3 Picture
SeekIC No. : 00161648 Detail

SPN01N60C3: MOSFET COOL MOS PWR TRANS 650V .3A

floor Price/Ceiling Price

Part Number:
SPN01N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 6000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 6000 mOhms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
0.3
0.2
A
Pulsed drain current,tp limited by Tjmax
TA = 25 °C
ID puls
1.6
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation,TA = 25°C
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPN01N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C300mA
Rds On (Max) @ Id, Vgs6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 100pF @ 25V
Power - Max1.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPN01N60C3
SPN01N60C3



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
LED Products
Semiconductor Modules
Cable Assemblies
Crystals and Oscillators
Power Supplies - Board Mount
Programmers, Development Systems
View more