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SPN01N60S5

Features: · New revolutionary high voltage technology· Ultra low gate charge· Extreme d v/d t rated· Optimized capacitances· Improved noise immunitySpecifications Parameter Symbol Value Unit Continuous drain currentTA = 25 °CTA = 100 °C ID 0.30.2 A Pulsed drain current, tp = 1ms 1...

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SeekIC No. : 004501268 Detail

SPN01N60S5: Features: · New revolutionary high voltage technology· Ultra low gate charge· Extreme d v/d t rated· Optimized capacitances· Improved noise immunitySpecifications Parameter Symbol Value Unit...

SPN01N60S5 Data Sheet

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SPN01N60S5
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5000

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Upload time: 2024/11/21

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Product Details

Description



Features:

· New revolutionary high voltage technology
· Ultra low gate charge
· Extreme d v/d t rated
· Optimized capacitances
· Improved noise immunity


Specifications

Parameter Symbol Value Unit
Continuous drain current
TA = 25 °C
TA = 100 °C		 ID 0.3
0.2		 A
Pulsed drain current, tp = 1ms 1)
TA= 25 °C		 ID puls 1.6
Reverse diode d v/d t
IS = 0.3 A, VDS< VDSS, di/dt = 100 A/µs,
Tjmax = 150 °C		 dv/d t 6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TA = 25 °C		 Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C



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