SI6404DQ-T1-E3, SI6405DQ, SI6410 Selling Leads, Datasheet
MFG:VISHAY Package Cooled:TSSOP-8 D/C:06+
SI6404DQ-T1-E3, SI6405DQ, SI6410 Datasheet download
Part Number: SI6404DQ-T1-E3
MFG: VISHAY
Package Cooled: TSSOP-8
D/C: 06+
SI6404DQ-T1-E3, SI6405DQ, SI6410
- Table of contents:
Info of SI6404DQ-T1-E3
Info of SI6405DQ
Info of SI6410
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About SI6404DQ
PDF/DataSheet Download
Datasheet: SI6404DQ
File Size: 47430 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About SI6405DQ
PDF/DataSheet Download
Datasheet: SI6405DQ
File Size: 237911 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About SI6410DQ
PDF/DataSheet Download
Datasheet: SI6410DQ
File Size: 166343 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SI6405DQ General Description
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SI6405DQ Features
· P-Channel Vertical DMOS
· Macro Model (Subcircuit Model)
· Level 3 MOS
· Apply for both Linear and Switching Application
· Accurate over the -55 to 125°C Temperature Range
· Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
· Macro Model (Subcircuit Model)
· Level 3 MOS
· Apply for both Linear and Switching Application
· Accurate over the -55 to 125°C Temperature Range
· Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
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