Features: TrenchFET® Power MOSFETApplicationLoad SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -9.5 -8.2 A TA = 70 -8 -6.5 Pulse...
Si6423DQ: Features: TrenchFET® Power MOSFETApplicationLoad SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ...
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Parameter | Symbol | 10 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | -12 | V | ||
Gate-Source Voltage | VGS | ±8 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -9.5 | -8.2 | A |
TA = 70 | -8 | -6.5 | |||
Pulsed Drain Current(10 s Pulse Width) | IDM | -30 | |||
Continuous Source Current (Diode Conduction)a | IS | -1.35 | -0.95 | ||
Maximum Power Dissipationa | TA = 25 | PD | 1.5 | 1.05 | W |
TA = 70 | 1.0 | 0.67 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 |