Si6404DQ

Features: · TrenchFET® Power MOSFETS: 2.5-V Rated· 30-V VDSApplication· Battery Switch· Charger SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ...

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Si6404DQ Picture
SeekIC No. : 004490554 Detail

Si6404DQ: Features: · TrenchFET® Power MOSFETS: 2.5-V Rated· 30-V VDSApplication· Battery Switch· Charger SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Vol...

floor Price/Ceiling Price

Part Number:
Si6404DQ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS: 2.5-V Rated
· 30-V VDS



Application

· Battery Switch
· Charger Switch



Pinout

  Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 11     8.6 A
TA = 70 8.9 6.9
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.5 0.95
Maximum Power Dissipationa TA = 25 PD 1.75 1.08 W
TA = 70 1.14 0.69
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W



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