MOSFET 30V 11A 1.75W 9.0mohm @ 10V
SI6404DQ-T1-GE3: MOSFET 30V 11A 1.75W 9.0mohm @ 10V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSSOP-8 | Packaging : | Reel |