SI6410DQ

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 7.8 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source


Features:

• 7.8 A, 30 V R_DS(ON) = 14 m @ V_GS = 10 V
R_DS(ON) = 21 m @ V_GS = 4.5 V
• Extended V_GSS range (±20V) for battery applications
• High performance trench technology for extremely
low R_DS(ON)
• Low profile TSSOP-8 package




Application

• Battery protection
• DC/DC conversion
• Power management
• Load switch




Pinout






Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		30	V
VGSS	Gate-Source Voltage		±20	V
ID	Drain Current Continuous	(Note 1a)	7.8	A
	Pulsed		20
PD	Power Dissipation	(Note 1a)	1.4	W
		(Note 1b)	1.1
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

30-V (D-S) Dual

This N-Channel MOSFET of the Si6410DQ is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V).