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Si6405DQ

Features: · P-Channel Vertical DMOS· Macro Model (Subcircuit Model)· Level 3 MOS· Apply for both Linear and Switching Application· Accurate over the -55 to 125°C Temperature Range· Model the Gate Charge, Transient, and Diode Reverse Recovery CharacteristicsDescriptionThe attached spice model of th...

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SeekIC No. : 004490555 Detail

Si6405DQ: Features: · P-Channel Vertical DMOS· Macro Model (Subcircuit Model)· Level 3 MOS· Apply for both Linear and Switching Application· Accurate over the -55 to 125°C Temperature Range· Model the Gate Ch...

Si6405DQ Data Sheet

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Part Number:
Si6405DQ
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· P-Channel Vertical DMOS
· Macro Model (Subcircuit Model)
· Level 3 MOS
· Apply for both Linear and Switching Application
· Accurate over the -55 to 125°C Temperature Range
· Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics


Description

The attached spice model of the Si6405DQ describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of the Si6405DQ is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.




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