SFS9644, SFS9926, SFS9Z14 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:8000 D/C:TO-
SFS9644, SFS9926, SFS9Z14 Datasheet download
Part Number: SFS9644
MFG: FAIRCHILD
Package Cooled: 8000
D/C: TO-
SFS9644, SFS9926, SFS9Z14
- Table of contents:
Info of SFS9644
Info of SFS9926
Info of SFS9Z14
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About SFS9644
PDF/DataSheet Download
Datasheet: SFS9644
File Size: 270440 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9926
PDF/DataSheet Download
Datasheet: SFS9926
File Size: 1068674 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SFS9Z14
PDF/DataSheet Download
Datasheet: SFS9Z14
File Size: 236399 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SFS9644 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-250 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-4.9 |
A
|
| Continuous Drain Current ( TC=100) |
-3.8 | ||
|
IDM |
Drain Current-Pulsed |
-20 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
150 |
mJ |
|
IAR |
Avalanche Current |
-4.9 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-4.8 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
40
0.32 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9644 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 0.549 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 0.549 (Typ.)
SFS9926 General Description
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for Battery protection circuit, Load switch and other power management application.
SFS9926 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain to Source Voltage |
20 |
V |
|
ID |
Continuous Drain Current (@ TA=25) |
6.5 |
A
|
|
IDM |
Drain Current Pulsed (Note 1) |
30 |
A |
|
VGS |
Gate to Source Voltage |
±12 |
V |
|
PD |
Total Power Dissipation Single Operation( TA=25) |
2.0 |
W |
| Total Power Dissipation Single Operation( TA=70) |
1.28 |
W | |
|
TSTG,TJ |
Operating Junction Temperature & Storage Temperature |
- 55 ~ 150 |
°C |
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
SFS9926 Features
` Low RDS(on) (0.030 )@VGS=4.5V
Low RDS(on) (0.043 )@VGS=2.5V
` Gate Charge (Typical 14nC)
` Improved dv/dt Capability
` Maximum Junction Temperature Range (150°C)
` Available in Tape and Reel
Low RDS(on) (0.043 )@VGS=2.5V
` Gate Charge (Typical 14nC)
` Improved dv/dt Capability
` Maximum Junction Temperature Range (150°C)
` Available in Tape and Reel
SFS9Z14 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-60 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-5.3 |
A
|
| Continuous Drain Current ( TC=100) |
-3.8 | ||
|
IDM |
Drain Current-Pulsed |
-21 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
120 |
mJ |
|
IAR |
Avalanche Current |
-5.3 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.5 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
24
0.16 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9Z14 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -60V
` Low RDS(ON) : 0.362 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -60V
` Low RDS(ON) : 0.362 (Typ.)
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