SFS9630, SFS9634, SFS9640 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:8000 D/C:09+
SFS9630, SFS9634, SFS9640 Datasheet download
Part Number: SFS9630
MFG: FAIRCHILD
Package Cooled: 8000
D/C: 09+
SFS9630, SFS9634, SFS9640
- Table of contents:
Info of SFS9630
Info of SFS9634
Info of SFS9640
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About SFS9630
PDF/DataSheet Download
Datasheet: SFS9630
File Size: 266650 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9634
PDF/DataSheet Download
Datasheet: SFS9634
File Size: 262849 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9640
PDF/DataSheet Download
Datasheet: SFS9640
File Size: 269530 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SFS9630 Maximum Ratings
| Symbol | Characteristic | Value | Units |
| VDSS |
Drain-to-Source Voltage | -200 | V |
| ID |
Continuous Drain Current (TC=25) |
-4.4 | A |
| Continuous Drain Current(TC=100) | -3.3 | ||
| IDM |
Drain Current-Pulsed | -18 | A |
| VGS |
Gate-to-Source Voltage |
±30 | V |
| EAS |
Single Pulsed Avalanche Energy | 258 | mJ |
| IAR |
Avalanche Current | -4.4 | A |
| EAR |
Repetitive Avalanche Energy | 3.3 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
33 0.26 |
W W/ |
| TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 | |
| TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |
SFS9630 Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = -200V
Low RDS(ON) : 0.581 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = -200V
Low RDS(ON) : 0.581 (Typ.)
SFS9634 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-250 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-3.4 |
A
|
| Continuous Drain Current ( TC=100) |
-2.6 | ||
|
IDM |
Drain Current-Pulsed |
-14 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
145 |
mJ |
|
IAR |
Avalanche Current |
-3.4 |
A |
|
EAR |
Repetitive Avalanche Energy |
3.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-4.8 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
33
0.26 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9634 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 0.876 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 0.876 (Typ.)
SFS9640 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-6.2 |
A
|
| Continuous Drain Current ( TC=100) |
-4.7 | ||
|
IDM |
Drain Current-Pulsed |
-25 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
256 |
mJ |
|
IAR |
Avalanche Current |
-6.2 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
40
0.32 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9640 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 0.344 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 0.344 (Typ.)
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