SFS9530, SFS9540, SFS9610 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:8000 D/C:TO-
SFS9530, SFS9540, SFS9610 Datasheet download
Part Number: SFS9530
MFG: FAIRCHILD
Package Cooled: 8000
D/C: TO-
SFS9530, SFS9540, SFS9610
- Table of contents:
Info of SFS9530
Info of SFS9540
Info of SFS9610
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About SFS9530
PDF/DataSheet Download
Datasheet: SFS9530
File Size: 239244 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9540
PDF/DataSheet Download
Datasheet: SFS9540
File Size: 293826 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9610
PDF/DataSheet Download
Datasheet: SFS9610
File Size: 252933 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SFS9530 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-100 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-8.0 |
A
|
| Continuous Drain Current ( TC=100) |
-5.6 | ||
|
IDM |
Drain Current-Pulsed |
-32 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
340 |
mJ |
|
IAR |
Avalanche Current |
-8.0 |
A |
|
EAR |
Repetitive Avalanche Energy |
3.9 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-6.5 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
39
0.26 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9530 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -100V
` Low RDS(ON) : 0.225 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -100V
` Low RDS(ON) : 0.225 (Typ.)
SFS9540 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-100 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-10.7 |
A
|
| Continuous Drain Current ( TC=100) |
-8.1 | ||
|
IDM |
Drain Current-Pulsed |
-43 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
534 |
mJ |
|
IAR |
Avalanche Current |
-10.7 |
A |
|
EAR |
Repetitive Avalanche Energy |
5.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-6.5 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
53
0.35 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9540 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -100V
` Low RDS(ON) : 0.161 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -100V
` Low RDS(ON) : 0.161 (Typ.)
SFS9610 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-1.4 |
A
|
| Continuous Drain Current ( TC=100) |
-0.9 | ||
|
IDM |
Drain Current-Pulsed |
-6.0 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
91 |
mJ |
|
IAR |
Avalanche Current |
-1.4 |
A |
|
EAR |
Repetitive Avalanche Energy |
1.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
13
0.1 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9610 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 2.25 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 2.25 (Typ.)
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