Features: • Low-Level Gate Characteristics• IGT = 200 A (Max) @ 25oC• Low Holding Current IH = 1 mA (Max) @ 25oC• Anode Common to Case• Hermetically SealedSpecifications MAXIMUM RATINGS Symbol Value Units Peak Repetitive Reverse Voltage SFS2326...
SFS2326: Features: • Low-Level Gate Characteristics• IGT = 200 A (Max) @ 25oC• Low Holding Current IH = 1 mA (Max) @ 25oC• Anode Common to Case• Hermetically SealedSpecification...
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MAXIMUM RATINGS |
Symbol |
Value |
Units |
Peak Repetitive Reverse Voltage SFS2326 |
VDRM |
200 |
Volts |
Non-Repetitive Peak Reverse Blocking Voltage (t < 5.0 ms) |
VRSM |
300 |
Volts |
RMS On-State Current (All Conduction Angles) |
IT(RMS) |
1.6 |
Amps |
Peak Non-Repetitive Surge Current |
ITFM |
15 |
Amps |
Peak Gate Power |
PGM |
20 |
Watts |
Average Gate Power |
PG(AV) |
0.1 |
Watts |
Peak Gate Current |
IGM |
0.01 |
Amps |
Peak Gate Voltage |
VGM |
6.0 |
Volts |
Operating Junction Temperature Range |
TJ |
-65 to +150 |
oC |
Storage Temperature Range |
Tstg |
-65 to +150 |
oC |
Thermal Resistance, Junction to Case |
RJC |
30 |
oC/W |