MOSFET P-CH/60V/7.3A/0.3OHM
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 7.3 A | ||
Resistance Drain-Source RDS (on) : | 0.3 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
-60 |
V |
ID |
Continuous Drain Current (TC=25) |
-7.3 |
A
|
Continuous Drain Current (TC=100) |
-5.1 | ||
IDM |
Drain Current-Pulsed |
-30 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy |
137 |
mJ |
IAR |
Avalanche Current |
-7.3 |
A |
EAR |
Repetitive Avalanche Energy |
2.4 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.5 |
V/ns |
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
25
0.19 |
W
W/°C |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |