SFS9614, SFS9620, SFS9624 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-220 D/C:09+
SFS9614, SFS9620, SFS9624 Datasheet download
Part Number: SFS9614
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 09+
SFS9614, SFS9620, SFS9624
- Table of contents:
Info of SFS9614
Info of SFS9620
Info of SFS9624
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About SFS9614
PDF/DataSheet Download
Datasheet: SFS9614
File Size: 274955 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9620
PDF/DataSheet Download
Datasheet: SFS9620
File Size: 263676 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SFS9624
PDF/DataSheet Download
Datasheet: SFS9624
File Size: 266323 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SFS9614 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-250 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-1.27 |
A
|
| Continuous Drain Current ( TC=100) |
-0.95 | ||
|
IDM |
Drain Current-Pulsed |
-5.0 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
110 |
mJ |
|
IAR |
Avalanche Current |
-1.27 |
A |
|
EAR |
Repetitive Avalanche Energy |
1.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-4.8 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
13
0.1 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9614 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 3.5 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 3.5 (Typ.)
SFS9620 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-3.0 |
A
|
| Continuous Drain Current ( TC=100) |
-1.9 | ||
|
IDM |
Drain Current-Pulsed |
-12 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
240 |
mJ |
|
IAR |
Avalanche Current |
-3.0 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
28
0.22 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9620 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 1.111 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 1.111 (Typ.)
SFS9624 Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-250 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-2.4 |
A
|
| Continuous Drain Current ( TC=100) |
-1.8 | ||
|
IDM |
Drain Current-Pulsed |
-9.6 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
144 |
mJ |
|
IAR |
Avalanche Current |
-2.4 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-4.8 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
28
0.22 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SFS9624 Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 1.65 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -250V
` Low RDS(ON) : 1.65 (Typ.)
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